Recently, Chinese semiconductor company Beijing NEXIC Technology Co., Ltd. has launched a state-of-art 1200V SiC MOSFET device product (N2M120007PP0) for renewable energy applications, achieving an industry-leading ultra-low on-resistance of 7mΩ. Based on an automotive-grade manufacturing platform, the new product adopts advanced device design and is compatible with 18V gate drive voltage. The new product aims at the applications requiring high voltage, large current, and low loss, such as the traction inverters in xEVs, contributing to the evolution of the renewable energy field.The new 1200V/7mΩ product will be delivered in TO-247-Plus package, with Kelvin-source connection and a low thermal resistance. These significantly reduce the switching oscillation and loss, and improve the thermal performance.The new product achieves a peak operation current of over 300A. It has a positive temperature coefficient, which can facilitate users to achieve high power design by paralleling multi
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