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Frontiers of Optoelectronics期刊编委、青年千人计划唐江教授课题组近期在FOE期刊上发表了关于硒化锑 基本物理性质的文章,详情如下: Characterization of basic physical properties of Sb2Se3 and its relevance for photovoltaics Chao CHEN 1 , David C.BOBELA 2 , Ye YANG 2 , Shuaicheng LU 1 , Kai ZENG 1 ,Cong GE 1 , Bo YANG 1 , Liang GAO 1 , Yang ZHAO 1 ,Matthew C. BEARD 2 , Jiang TANG 1* 1 Wuhan National Laboratory forOptoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan430074, China 2 Chemistry and Nanoscience Center,National Renewable Energy Laboratory, Golden, CO, 80401, USA Abstract Antimony selenide(Sb2Se3) is a promising absorber material for thin film photovoltaics becauseof its attractive material, optical and electrical properties. In recent years,the power conversion efficiency (PCE) of Sb2Se3 thin f
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